back and face effect

This paper presents an important characteristic for the bistatic radar clutter spectrum,which is named backside effect.

本文发现了双基地杂波谱的一个重要特征———背面效应(Backside effect)。

Thesimulator, considering the special structure of SOI devices, studies the influencesof recombination-generation rate on parameters of internal devices and analyzesthe back-gate effect and the principle of Kink effect of Ⅰ-Ⅴ characteristics.

这个模型从SOI器件的特殊结构出发,着重考虑了复合-产出率对器件内部参数的影响,分析了SOI-MOSFET器件的背栅效应以及I-V特性的扭曲(Kink)效应产生的机理。

The back-gate effects on front-channel subthreshold characteristics,on-r esistance,and off-state breakdown characteristics of these devices are studied in detail.

相比于源体紧密接触结构,低势垒体接触结构横向双扩散功率晶体管的背栅效应更小,这是因为低势垒体接触结构更好地抑制了浮体效应和背栅沟道开启。