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1、abbr.Guamal, Colombia 哥伦比亚;glutamic acid 谷氨酸;glacial acetic acid 冰醋酸;General Aviation association 通用航空协会;
1、Of whom BELIAL, ASMODAY, and GAAP, were Chief .
BELIAL, ASMODAY 和GAAP是其中的领袖.
2、To minimize channeling effects, the GaAs target should be misaligned from the axis of the beam.
为了使沟道效应最小, GaAs靶应稍偏离离子束的轴向.
3、Epitaxial layers of InSb and InAs _ xSb _ ( 1-x ) on ( 111 ) InSb and ( 100 ) GaAs substrate have been grown by MBE technique.
在 ( 111 ) InSb和 ( 100 ) GaAs衬底上,用分子束外延技术生长了InSb和InAs_xSb_ ( 1-x ) 外延层.
4、GAAP was the beancounter's gold standard for decades, but it is now widely seen as cumbersome.
公认会计准则(GAAP)是会计领域数十年来的黄金法则, 但现在被普遍认为运转不灵.
5、Under U.S. GAAP , for example, research and development costs are generally as expenses when they occur.
比如,根据GAAP, 研发成本通常在发生时才被视为费用.
6、Pt-GaAs Schottky barrier APDs have been investigated.
Pt-GaAs肖特基势垒雪崩光电探测器已研制成功.
7、The 19 nt sequence is a negative region that represses transcription of argS.
即-52nt和-70nt之间的19个碱基(AATAGTGAAAACGGCAATA)可能是大肠杆菌argS的转录负调控区.
8、The PVS spectra for GaAs 、 InP 、 InGaAs 、 InGaAsP etc. are reported in this paper.
本文介绍了InP、InGaAs、InGaP、InGaAsP等 的光压港(PVS).
9、The stable 1.3μ m InGaAsP travelling-wave semiconductor optical Amplifier ( TW-SOA ) module is demonstrated in this paper.
报道一种具有稳定封装结构的1.3μmInGaAsP行波半导体光放大器.
10、The experiment of fully automatic reactive ion etching on 3 inch GaAs wafer is described.
介绍了全自动反应离子腐蚀3英寸GaAs片的实验研究工作.
11、Applications of mix& match plate-making technology using E-beam and optics for the development of GaAs devices
电子束与光学混合制版技术在GaAs器件研制中的应用
12、Determination of GaAs Microwave FET Noise figure and available power Gain
GaAs FET噪声系数和资用功率增益的测定
13、In the paper, an improved method for the simultaneous determination of GaAs FET noise figure and available power gain is given a method for the design of loss matching network and quantitative analysis of its loss is also presented.
本文给出了可同时测量GaAs FET噪声系数和资用功率增益的改进方法,以及对有耗匹配网络设计和损耗的定量分析方法。
14、INVESTIGATION OF A1_2O_3 ANTIREFLECTIVE COATING FOR GaAlAs HIGH SPEED LEDs The dependence of the H 2O/ TEOS molar ratio on the structure and performance of the SiO 2 antireflective coating was studied in detail.
GaAlAs快速边发光管发射端面沉积Al2O3抗反射层的研究较详细地研究了工艺参量H2O/TEOS摩尔比对薄膜结构和性能的影响。
15、The aurum chemisorption on the GaAs ( 110) surface is investigated. The energy band structure and the density of surface states are studied and calculated by the infinitive orders perturbation theory developed by K.
研究了Au吸附在GaAs(110)表面的吸附构型,并计算了表面态密度和表面能带结构。
16、The surface of the active layer of GaAs photocathode must reach the atomically clean surface before Cs-O activeness.
GaAs光电阴极在进行Cs-O激活前,激活层表面必须达到原子级洁净。
17、Objective: To construct the general Administrative Aptitude test ( GAAT) for the government functionary.
目的:为省、地(市)级公务员录用考试编制一般行政能力倾向测验(简称GAAT)。
18、Ambipolar Diffusion length in Semi insulating GaAs
半绝缘GaAs中的双极扩散长度
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